2SD1060 no.686-1/4 applications ? suitable for relay drivers, high-speed inverters, converters, and other general large-current switching features ? low collector-to-emitter saturation voltage : v ce (sat)=0.3v max / i c =3a, i b = 0.3a speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 60 v collector-to-emitter voltage v ceo 50 v emitter-to-base voltage v ebo 6v collector current i c 5a collector current (pulse) i cp 9a collector dissipation p c 1.75 w tc=25 c30w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7536-002 ordering number : en686k 40412 tkim tc-00002737/82207fa tiim tc-00000844/913003tn(kt)/91098ha(kt)/d251mh/4017ki sanyo semiconductors data sheet 2SD1060 npn epitaxial planar silicon transistor 50v / 5a switching applications http:// semicon.sanyo.com/en/network product & package information ? package : to-220-3l ? jeita, jedec : sc-46, to-220ab ? minimum packing quantity : 50 pcs./magazine marking electrical connection 1 : base 2 : collector 3 : emitter sanyo : to-220-3l 10.0 (0.6) (1.7) 1.27 1.52 0.8 2.54 2.54 13.08 15.7 2.8 13.3 2.4 9.2 3.0 1.3 4.5 1.3 8.9 max 0.5 1 23 3.6 d1060 lot no. rank 2 1 3
2SD1060 no.686-2/4 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =40v, i e =0a 0.1 ma emitter cutoff current i ebo v eb =4v, i c =0a 0.1 ma dc current gain h fe 1v ce =2v, i c =1a 100* 280* h fe 2v ce =2v, i c =2a 80 gain-bandwidth product f t v ce =5v, i c =1a 30 mhz output capacitance cob v cb =10v, f=1mhz 100 pf collector-to-emitter saturation voltage v ce (sat) i c =3a, i b =0.3a 0.3 v collector-to-base breakdown voltage v (br)cbo i c =1ma, i e =0a 60 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma, r be = 50 v emitter-to-base breakdown voltage v (br)ebo i e =1ma, i c =0a 6 v turn-on time t on see speci ed test circuit 0.1 s storage time t stg 1.4 s fall time t f 0.2 s * : the 2SD1060 is classi ed by 1a h fe as follows rank r s h fe 100 to 200 140 to 280 switching time test circuit pw=20 s d.c. 1% v r r b v cc =20v v be = --5v + + 50 input outpu t r l = 10 100 f 470 f i b1 i b2 i c =10i b1 = --10i b2 =2a i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i b =0ma 50ma 100ma 150ma 250ma 300ma 350ma 400ma 500ma 200ma itr08436 10 8 6 4 2 0 0 0.8 2.4 2.0 0.4 1.2 1.6 450ma i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a 10 8 5 2 1 9 6 7 3 4 0 v ce =2v ta=80 c 25 c --20 c 0 0.2 0.4 0.6 0.8 1.4 1.2 1.0 itr08438
2SD1060 no.686-3/4 v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v 10 0.1 23 5 23 5 23 5 2 1.0 10 5 3 2 5 3 2 1.0 5 3 2 0.1 0.01 ta=80 c 25 c -- 2 0 c i c / i b =20 itr08444 v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v ce (sat) -- v 10 0.1 23 5 23 5 23 5 2 1.0 1.0 10 7 5 3 2 2 7 5 3 i c / i b =10 i c / i b =20 itr08446 p c -- ta ambient temperature, ta -- c collector dissipation, p c -- w p c -- tc case temperature, tc -- c collector dissipation, p c -- w 0 35 30 25 20 15 10 5 20 060 40 80 100 140 120 160 itr08449 0 2.0 1.75 1.0 1.2 1.4 1.6 1.8 0.8 0.6 0.4 0.2 20 060 40 80 100 140 120 160 it12873 no heat sink a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a 10ms 100ms 1.0 5 7 2 3 5 7 2 3 10 2 0.1 10 1.0 25 3 57 7 2 5 37 100 dc operation i cp =9a 1ms i c =5a itr08448 1ms to 100ms : single pulse h fe -- i c collector current, i c -- a dc current gain, h fe v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v ta=80 c 25 c -- 2 0 c i c / i b =10 10 0.1 23 5 23 5 23 5 2 1.0 10 5 3 2 5 3 2 1.0 5 3 2 0.1 0.01 itr08442 100 7 1000 7 5 3 2 5 3 2 10 0.01 3 25 0.1 3 25 1.0 3 22 5 10 ta=80 c --20 c 25 c v ce =2v itr08440
2SD1060 no.686-4/4 ps this catalog provides information as of april, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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